机译:具有电源应用界面电荷工程的高击穿电压GaN基垂直场效应晶体管的研究
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, PR China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, PR China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, PR China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, PR China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, PR China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, PR China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, PR China;
GaN HFETs; Vertical; Heterostructure; Breakdown voltage; Power device;
机译:基于界面电荷工程的高击穿电压GaN基垂直场效应晶体管的设计与仿真
机译:具有源极连接场板的高击穿电压GaN基电流孔径垂直电子晶体管的研究
机译:具有p-GaN岛结构的高击穿电压GaN基垂直HFET的设计,用于电源应用
机译:改进的垂直GaN基场效应晶体管的导通电阻和击穿电压
机译:电力电子应用增加功率密度的GaN基垂直晶体管的设计与开发
机译:施加电压对ZnO纳米线场效应晶体管中电荷传输特性的影响
机译:GaN基n沟道和p沟道异质结场效应晶体管的阈值电压工程