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Impact of self-heating and thermal coupling on analog circuits inSOI CMOS

机译:自热和热耦合对SOI CMOS中模拟电路的影响

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摘要

This paper examines the influence of the static and dynamicnelectrothermal behavior of silicon-on-insulator (SOI) CMOS transistorsnon a range of primitive analog circuit cells. In addition to the morenwell-known self-heating close-range thermal coupling effects are alsonexamined. Particular emphasis is given to the impact of these effects onndrain current mismatch due to localized temperature differences. Dynamicnelectrothermal behavior in the time and frequency domains is alsonconsidered, measurements and analyses are presented for a simplenamplifier stage, current mirrors, a current output D/A converter, andnring oscillators fabricated in a 0.7-Μm SOI CMOS process. It is shownnthat circuits which rely strongly on matching, such as the currentnmirrors or D/A converter, are significantly affected by self-heating andnthermal coupling. Anomalies due to self-heating are also clearly visiblenin the small-signal characteristics of the amplifier stage. Self-heatingneffects are less significant for fast switching circuits. The paperndemonstrates how circuit-level simulations can be used to predictnundesirable nonisothermal operating conditions during the design stage
机译:本文研究了一系列原始模拟电路单元中绝缘体上硅(SOI)CMOS晶体管的静态和动态电热行为的影响。除了更广为人知的自热近距离热耦合效应,还被消除。由于局部温度差异,这些影响对漏极电流失配的影响尤为突出。还考虑了在时域和频域中的动态电热行为,并针对以0.7μmSOI CMOS工艺制造的简单放大器级,电流镜,电流输出D / A转换器和环形振荡器进行了测量和分析。结果表明,强烈依赖匹配的电路(例如电流镜或D / A转换器)会受到自热和非热耦合的显着影响。在放大器级的小信号特性中,由于自热引起的异常也很明显。自热效应对快速开关电路影响不大。本文演示了如何在设计阶段使用电路级仿真来预测不必要的非等温运行条件

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