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Design and Fabrication of Identification Inkjet Print Head Chip Fuse Sensors

机译:识别喷墨打印头芯片熔断传感器的设计与制造

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摘要

This paper describes the development of a thermal inkjet print head with an identification circuit. The identification circuit was designed using a fuse and other electronic components. The multifunctionality of the integrated circuit in a print head of the cartridge was used to satisfy user demands. The circuit was encoded to enable identification of general information regarding the ink cartridge, such as its model number, serial number, color settings (color or gray scale), and the best print quality. In addition, the current status of the cartridge, such as whether its life has elapsed, can be identified. The identification circuit was connected in series with the metal oxide semiconductor (MOS) drain fuse after the wafer factory burn break fuse. A V_(ID) of more than 3.6 V indicates a blown fuse. Therefore, the fuse-blow voltage was set to be 3.6 V. At a value of V_(GS) equal to 15.5 V, blown fuse parameter analysis was performed. Linear regression showed that the I_D current was 54.36 mA. X-ray diffraction patterns revealed that the X-rays penetrate the fuse circuit from the top. Therefore, the elemental composition of all layers, from the upper layer SiC/ SiN to the Si substrate, was analyzed and determined to be Si, C, N, Ta, Al, P, and O, among others. Because most layers contain Si, the Si peak was the largest. The fuse profile was characterized using scanning electron microscopy. Fuse size and current density were also investigated.
机译:本文介绍了带有识别电路的热喷墨打印头的开发。识别电路是使用保险丝和其他电子元件设计的。墨盒的打印头中集成电路的多功能性被用来满足用户需求。对电路进行了编码,以便能够识别有关墨盒的一般信息,例如其型号,序列号,颜色设置(彩色或灰度)和最佳打印质量。另外,可以识别盒带的当前状态,例如其寿命是否已经过去。晶圆工厂烧断保险丝之后,识别电路与金属氧化物半导体(MOS)漏极保险丝串联连接。 V_(ID)大于3.6 V表示保险丝烧断。因此,将保险丝熔断电压设定为3.6V。在V_(GS)等于15.5V的值下,进行了保险丝熔断参数分析。线性回归显示I_D电流为54.36 mA。 X射线衍射图表明X射线从顶部穿透保险丝电路。因此,分析了从上层SiC / SiN到Si衬底的所有层的元素组成,并确定为Si,C,N,Ta,Al,P和O等。因为大多数层都包含Si,所以Si峰最大。使用扫描电子显微镜表征熔丝轮廓。还研究了保险丝的尺寸和电流密度。

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  • 来源
    《Sensors and materials》 |2016年第5期|493-501|共9页
  • 作者单位

    Department of Electronic Engineering, National Kaohsiung University of Applied Sciences (KUAS), Kaohsiung 807, Taiwan;

    Department of Chemical and Materials Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan-Tzu District, Kaohsiung 811, Taiwan;

    Department of Electrical Engineering, Chang Gung University, Taoyuan 33302, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    identification; CMOS-MEMS; multiplexer; addressing; X-ray;

    机译:鉴定CMOS-MEMS;复用器;寻址X光;

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