Amorphous Indium Zinc Oxide Thin Film Transistors With Poly-4-vinylphenol Gate Dielectric Layers

摘要

Thin film transistors (TFT_s) with amorphous indium zinc oxide (a-IZO) as channel layers and poly-4-vinylphenol as dielectric layers were fabricated. Transmission curves show that the double-layer structure of the a-IZO layer and the poly-4-vinylphenol layer exhibits the antireflection effect. It was found that post heat-treatment at relatively low temperature will improve the electrical performance of the transistors. TFT devices with saturation mobility of 25.4 cm~2 V~(-1) s~(-1), threshold voltage of 4.0 V, subthreshold swing value of 0.88 V/decade and current on/off ratio of 106 were obtained.