机译:与GaN晶格匹配的Sc_xAl_yGa_(1-x-y)N合金的自发极化和带隙弯曲的第一性原理研究
Department of Electrical, Electronic and Information Engineering, Kanto Gakuin University, 1-50-1 Mutsuurahigashi, Yokohama, Kanagawa 236-8501, Japan;
Department of Electrical, Electronic and Information Engineering, Kanto Gakuin University, 1-50-1 Mutsuurahigashi, Yokohama, Kanagawa 236-8501, Japan;
Department of Electrical, Electronic and Information Engineering, Kanto Gakuin University, 1-50-1 Mutsuurahigashi, Yokohama, Kanagawa 236-8501, Japan;
Institute of Multidisciplinary Research of Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai, Miyagi 980-8577, Japan;
Tsukuba Research Laboratory, Sumitomo-Chemical Co., Ltd, 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan;
Tsukuba Research Laboratory, Sumitomo-Chemical Co., Ltd, 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan;
Tsukuba Research Laboratory, Sumitomo-Chemical Co., Ltd, 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan;
Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan;
机译:晶格匹配GaN的Sc_xAl_yGa_(1-x-y)N合金的电子结构和自发极化:第一性原理研究
机译:与GaN晶格匹配的Y_xAl_yGa_(1-x-y)N合金的自发极化和带隙弯曲
机译:(Zn,Mg,Be)O宽禁带半导体合金的带隙弯曲和p型掺杂:第一性原理研究
机译:使用UV-Vis光谱研究IN_AL_YGA_(1-X-Y)N季合金能带隙的研究
机译:RPECVD制备的硅酸alloy合金的光谱研究:导带/价带偏移能和光学带隙的比较。
机译:GaP1-xBix稀铋化物合金中的带隙和自旋轨道分裂能的巨大弯曲
机译:带隙弯曲和p型掺杂(Zn,mg,Be)O宽间隙 半导体合金:第一原理研究