NOVEL TERNARY SEMICONDUCTING ALLOYS HAVING BAND GAPS SMALLER 0.8 EV

摘要

The invention relates to ternary semiconducting alloys and thermoelectric generators and Peltier arrays comprising the same and to methods for producing the ternary semiconducting alloys. The ternary semiconducting alloys have band gaps smaller 0.8 eV. The ternary semiconducting alloy is derived from two binary parent compounds and one element of the ternary semiconducting alloy is contained in both binary parent compounds.