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机译:通过分子束外延生长带隙从3.4到0.8 eV的非晶和晶体GaNAs合金用于太阳能转换设备
School of Physics and Astronomy, University of Nottingham, Nottingham NC72RD, UK;
School of Physics and Astronomy, University of Nottingham, Nottingham NC72RD, UK;
School of Physics and Astronomy, University of Nottingham, Nottingham NC72RD, UK;
Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720-8197, USA;
Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720-8197, USA;
Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720-8197, USA;
Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720-8197, USA;
Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720-8197, USA;
Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720-8197, USA;
Department of Physics, SUPA, Strathclyde University, Glasgow C4 ONC, UK;
Department of Physics, SUPA, Strathclyde University, Glasgow C4 ONC, UK;
Department of Physics, SUPA, Strathclyde University, Glasgow C4 ONC, UK;
Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720-8197, USA;
A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
机译:生长温度和器件结构对分子束外延生长GaP太阳能电池的影响
机译:分子束外延生长过程中高能电子束对源通量的影响对GaAs带隙的光致发光上转换。
机译:分子束外延生长的Galnassb季合金的带隙能量及其温度依赖性
机译:GANAS合金的分子束外延的生长高度含量的氢气生产潜在光电潮应用
机译:子带外延生长和宽带隙锌-镁-硒半导体材料及其子结构的异质结构的表征。
机译:使用分子束外延在晶体和非晶氧化物衬底上生长石墨碳
机译:使用分子束外延在晶体和非晶氧化物衬底上生长石墨碳
机译:非平衡GaNas合金的带隙范围为0.8-3.4 eV