Method of increasing energy band gap of crystalline aluminum oxide layer and method of manufacturing charge trap memory device comprising crystalline aluminum oxide layer having high energy band gap

摘要

This invention provides a method for increasing band gap of aluminum oxide layer and a method for manufacturing charge trapping storage device, namely, this invention provides a charge trapping storage device comprising crystal aluminum oxide with increased band gap and crystal aluminum oxide layer, and manufacture method thereof. A method for increasing band gap of aluminum oxide layer comprises: forming non-crystal aluminum oxide layer on lower film; introducing hydrogen (H) or hydroxyl (OH) in the non-crystal aluminum oxide layer, in order to realize crystallization of non-crystal aluminum oxide containing H or OH.