首页> 外文期刊>Japanese journal of applied physics >Electronic Structure and Spontaneous Polarization in Sc_xAl_yGa_(1-x-y)N Alloys Lattice-Matched to GaN: A First-Principles Study
【24h】

Electronic Structure and Spontaneous Polarization in Sc_xAl_yGa_(1-x-y)N Alloys Lattice-Matched to GaN: A First-Principles Study

机译:晶格匹配GaN的Sc_xAl_yGa_(1-x-y)N合金的电子结构和自发极化:第一性原理研究

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

We performed first-principles calculations of the spontaneous polarization and electronic band structures in Sc_xAl_yGa_(1-x-y)N alloys assuming their growth on freestanding GaN. We found an apparent deviation from the Vegard's law of the lattice constants of the Sc_xAl_yGa_(1-x-y)N alloys lattice-matched to GaN. It was supposed that this deviation comes from the different bonding properties of IIIB and MIA nitrides, resulting in different crystal structures, such as hexagonal and wurtzite structures. As was reported in our previous report on Yc_xAl_yGa_(1-x-y)N [K. Shimada et al.: J. Appl. Phys. 110 (2011) 074114], we also found that in Sc_xAl_yGa_(1-x-y)N alloys, the superlattice-like structure of Sc atoms reduced the magnitude of spontaneous polarization [K. Shimada et al.: Semicond. Sci. Technol. 27 (2012) 105014]. The magnitude of the spontaneous polarization of Sc_xAl_yGa_(1-x-y)N is larger than that of Yc_xAl_yGa_(1-x-y)N in a wide mole fraction range of Ga. We found the nonlinearity and dependence of the atomic arrangement of Sc in the alloys. The band-gap energies at r have the same characteristics as the spontaneous polarization. The band-gap energies of Sc_xAl_yGa_(1-x-y)N are also larger than those of Yc_xAl_yGa_(1-x-y)N in the wide mole fraction range of Ga. The band structures of Sc_xAl_yGa_(1-x-y)N have a direct gap at r and form a flat band around the valence band top originating from the hybridization of the Sc 3d and N 2p electrons.
机译:我们假设Sc_xAl_yGa_(1-x-y)N合金在自立GaN上的生长,对其自发极化和电子能带结构进行了第一性原理计算。我们发现与GaN晶格匹配的Sc_xAl_yGa_(1-x-y)N合金的晶格常数与维格定律存在明显偏差。可以认为,这种偏差来自IIIB和MIA氮化物的不同键合特性,从而导致了不同的晶体结构,例如六角形和纤锌矿结构。正如我们先前关于Yc_xAl_yGa_(1-x-y)N [K. Shimada等:J.Appl.Chem。物理110(2011)074114],我们还发现在Sc_xAl_yGa_(1-x-y)N合金中,Sc原子的超晶格状结构降低了自发极化的幅度[K. Shimada等:Semicond。科学技术。 27(2012)105014]。在宽的Ga摩尔分数范围内,Sc_xAl_yGa_(1-xy)N的自发极化幅度大于Yc_xAl_yGa_(1-xy)N的极化。我们发现合金中Sc的原子排列的非线性和依赖性。 。 r处的带隙能量具有与自发极化相同的特性。在Ga的宽摩尔分数范围内,Sc_xAl_yGa_(1-xy)N的带隙能也比Yc_xAl_yGa_(1-xy)N的带隙能大。Sc_xAl_yGa_(1-xy)N的能带结构具有直接间隙在r处,并且由于Sc 3d和N 2p电子的杂交而在价带顶部周围形成一个平坦带。

著录项

  • 来源
    《Japanese journal of applied physics》 |2013年第8issue2期|08JM04.1-08JM04.4|共4页
  • 作者单位

    Department of Electrical, Electronic and Information Engineering, Kanto Gakuin University, Yokohama 236-8501, Japan;

    Institute of Multidisciplinary Research of Advanced Materials, Tohoku University, Sendai 980-8577, Japan;

    Tsukuba Research Laboratory, Sumitomo-Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan;

    Tsukuba Research Laboratory, Sumitomo-Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan;

    Tsukuba Research Laboratory, Sumitomo-Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan;

    Department of Electrical Engineering and Bioscience, Waseda University, Shinjuku, Tokyo 169-8555, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号