Si_xSn_yGe_1-x-y and related alloy heterostructures based on Si, Ge and Sn

摘要

A novel method for synthesizing device-quality alloys and ordered phases in a Si—Ge—Sn system uses a UHV-CVD process and reactions of SnD₄ with SiH₃GeH₃. Using the method, single-phase Si_xSn_yGe_1-x-y semiconductors (x≦0.25, y≦0.11) are grown on Si via Ge_1-xSn_x buffer layers The Ge_1-xSn_x buffer layers facilitate heteroepitaxial growth of the Si_xSn_yGe_1-x-y films and act as compliant templates that can conform structurally and absorb the differential strain imposed by the more rigid Si and Si—Ge—Sn materials. The SiH₃GeH₃ species was prepared using a new and high yield method that provided high purity semiconductor grade material.