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机译:MOCVD重新设计P-GAN的特征及垂直GAN电力装置的界面性质
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Iowa State Univ Dept Elect & Comp Engn Ames IA 50011 USA;
Arizona State Univ Dept Phys Tempe AZ 85287 USA;
Arizona State Univ Dept Phys Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Dept Phys Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
gallium nitride; regrow; interface; p-GaN; growth rate;
机译:GaN垂直通道结场效应晶体管,MOCVD重新生成P-GaN
机译:Nulplanar Gand P-GaN的垂直GaN设备中漏电流的起源
机译:MOCVD再生长垂直结构中埋入式p-GaN的激活
机译:大功率垂直电子器件的m面GaN重生p-n结中的界面杂质的研究
机译:GaN-On-GaN垂直功率器件的电子显微镜表征= GaN-On-GaN垂直功率器件的电子显微镜表征
机译:用多指架构调制对高功率应用的自终止蚀刻技术常关P-GAN / ALGAN / GAN HEMT的研究
机译:p-GaN退火对GaN基LED晶圆和器件性能的影响