机译:GaN垂直通道结场效应晶体管,MOCVD重新生成P-GaN
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Dept Phys Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Dept Phys Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Gallium nitride; Logic gates; Etching; P-n junctions; Transistors; MOCVD; Gallium nitride; junction field-effect transistor (JFET); p-GaN regrowth; selective area doping;
机译:具有E模式P-GaN门HEMT和D模式SIC结域效应晶体管的1200V GAN / SIC CASCODE器件
机译:使用p-GaN栅极触点控制增强模式Al_xGa_(1-x)N / GaN结异质结构场效应晶体管的阈值电压
机译:MOCVD重新设计P-GAN的特征及垂直GAN电力装置的界面性质
机译:具有重新生长的p-GaN / AlGaN / GaN半极性栅极结构的GaN衬底上的1.7 kV / 1.0mΩcm2常关型垂直GaN晶体管
机译:高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
机译:基于再生和注入方法的N沟道GaN金属氧化物半导体场效应晶体管的制作和评估
机译:基于再生和植入方法的N沟道GaN金属氧化物半导体场效应晶体管的制造与评价