Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement

摘要

This work reports the strain effect on the electrical properties of highlydoped n-type single crystalline cubic silicon carbide (3C-SiC) transferredonto a 6-inch glass substrate employing an anodic bonding technique. Theexperimental data shows high gauge factors of u00018.6 in longitudinaldirection and 10.5 in transverse direction along the [100] orientation. Thepiezoresistive effect in the highly doped 3C-SiC film also exhibits anexcellent linearity and consistent reproducibility after several bending cycles.The experimental result is in good agreement with the theoretical analysisbased on the phenomenon of electron transfer between many valleys in theconduction band of n-type 3C-SiC. Our finding for the large gauge factor inn-type 3C-SiC coupled with the elimination of the current leak to theinsulated substrate could pave the way for the development of single crystalSiC-on-glass based MEMS applications.