Super junction semiconductor component has n-type region, mobility of electrons in n-type region and holes in p-type region is equal or lower than half of mobility of electrons or holes in first intrinsic semiconductor region

摘要

Super junction semiconductor component has super junction structure which is equipped with repetitive structure of unit. In this arrangement n-type region (2), p-type region (1) and first intrinsic semiconductor region (3) is arranged between the n-type region and p-type region. The value of the mobility of electrons in n-type region and holes in p-type region is equal or lower than the half of the value of the mobility of the electrons or holes in the first intrinsic semiconductor region.