RF-MBE growth of cubic InN films on MgO (001) substrates

摘要

Cubic InN films have been grown on MgO substrates with cubic GaN underlayers by RF-N_2 plasma MBE. By changing the growth conditions, we clarified the growth temperature and In flux dependence of the quality of cubic InN films. It was found the surface of cubic InN films grown at relatively higher temperatures was smooth and that the hexagonal phase content in the InN films decreased with increasing In flux. Based on the findings, we have successfully obtained a c-InN film with high phase-purity and a smooth surface. We have carried out micro Raman scattering measurements for the high-quality cubic InN film. Raman peaks were clearly observed at 596 cm~(-1) and 467 cm~(-1), which are attributed to longitudinal optical and transverse optical phonon modes of cubic InN, respectively.