RF-MBE growth of cubic InN films on YSZ(001) vicinal substrates

摘要

Cubic InN (zincblende structure) films have been directly grown on yttria-stabilized zirconia (YSZ) (001)-oriented and vicinal substrates by rf-plasma-assisted molecular beam epitaxy (RF-MBE) (The vicinal substrates are misoriented by 1° toward < 110 >.), and structurally characterized by X-ray diffraction and atotnic force microscopy. Compared with the growth on the (001)-oriented substrate, the surface grain size of the cubic InN film is remarkably large for the growth on the vicinal substrates. From the 2θ/ω and ω X-ray reciprocalrnspace mapping measurements, hexagonal InN is found to be preferentially generated on the c-InN{111} facets. By using the YSZ(001) vicinal substrate, the hexagonal phase incorporation ratio decreased from 16.3% on the (001)-oriented substrate to 11.7% with the same growth condition. And on the vicinal substrate, hexagonal InN is generated predominantly from the c-InN(111) facets which are inclined to the upward direction of the atomic steps.