Design optimization of the bit and word lines in magnetic random access memory in the Stoner-Wohlfarth model

摘要

The optimization in the design of the bit and word lines in magnetic random access memory is performed in the Stoner-Wohlfarth model. This is done by calculating the asteroid curves as a function of the angle between the bit and word lines. The calculation essentially involves finding the energy minima of the system. The switching field is reduced greatly when the angle between the bit and word lines is deviated from the right angles. Thermal stability of half-selected cells, which is estimated by calculating the energy barrier, is also improved significantly.