Formation of a broad photoluminescence band from Si~+-implanted SiO_2 films by varying the heating rate of rapid thermal annealing

摘要

Varying the heating rate of rapid thermal annealing (RTA) reveals a broadband shift of room-temperature photoluminescence (PL) in 3×10~(16)cm~(-2) Si~+-implanted 400-nm-thick SiO_2 films after RTA at 1150℃ in dry nitrogen. At a heating rate of 100℃/s, the PL peaks shift from 2.6 eV to 1.7 eV for isothermal RTA durations from 1 to 20 s. Additionally, decreasing the heating rate to 25℃/s does not significantly shift the PL peak in the films after the isothermal RTA for durations s=1 s. The attractive features of RTA provide a valuable reference for manufacturing Of optoelectronic devices.