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机译:1.3μmGaInNAs脊形波导激光器的静态和动态性能优化
The University of Nottingham, University Park, Nottingham NG7 2RD, UK;
The University of Nottingham, University Park, Nottingham NG7 2RD, UK;
The University of Nottingham, University Park, Nottingham NG7 2RD, UK;
ORC, Tampere University of Technology, P.O. Box 692, 33101 Tampere, Finland;
Photonics Laboratory, Chalmers University of Technology, 41296 Goeteborg, Sweden;
Photonics Laboratory, Chalmers University of Technology, 41296 Goeteborg, Sweden;
Photonics Laboratory, Chalmers University of Technology, 41296 Goeteborg, Sweden;
Photonics Laboratory, Chalmers University of Technology, 41296 Goeteborg, Sweden;
Photonics Laboratory, Chalmers University of Technology, 41296 Goeteborg, Sweden;
The University of Nottingham, University Park, Nottingham NG7 2RD, UK;
optimisation; GaInNAs; dilute nitride; laser diode; small-signalanalysis;
机译:1.29- / spl mu / m GaInNAs脊波导激光二极管的静态和动态特性
机译:1.29 / spl mu / m GaInNAs具有改进性能的多个量子阱脊波导激光二极管
机译:高性能脊波波导多层(N = 2、5和10)InAs / InGaAs / GaAs量子点激光,范围为1.3 /μm
机译:1.3μmGainnas脊波导激光器的静态和动态性能优化
机译:脊形波导中红外铟镓砷锑锑量子阱激光器,采用脉冲阳极氧化刻蚀制成。
机译:窄脊波导高功率单模1.3μmInAs / InGaAs十层量子点激光器
机译:窄脊波导高功率单模1.3μmInAs / InGaAs十层量子点激光器
机译:埋氧氧化物脊波导Inalas-Inp-InGaasp(λ约1.3微米)量子阱异质结构激光二极管