1.29 /spl mu/m GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance

摘要

The authors report an MBE-grown GaInNAs MQW ridge-waveguide (RWG) emitting at 1.29 /spl mu/m with performance data that for the first time rival those of InGaAsP lasers. Among these data are threshold currents of 21 mA, slope efficiencies of 0.25 W/A per facet and values of up to 110 K for the characteristic temperature T/sub 0/. These important improvements in material quality should pave the way towards monolithically-grown 1.30 /spl mu/m GaInNAs VCSELs in the near future.