C-V and DLTS studies of radiation induced Si-SiO_2 interface defects

摘要

Interface traps at the Si-SiO_2 interface have been and will be an important performance limit in many (future) semiconductor devices. In this paper, we present a study of fast neutron radiation induced changes in the density of Si-SiO_2 interface-related defects. Interface related defects (P_b centers) are detected before and upon the irradiation. The density of interface-related defects is increasing with the fast neutron fluence.