Semiconductor detector, especially a photodetector, is hardened against damaging radiation, especially laser radiation, by implanting ions which migrate to radiation-induced defects

摘要

Semiconductor detector hardening against damaging radiation, by implanting ions which can migrate to radiation-induced defects. Independent claims are also included for the following: (i) manufacture of a laser radiation resistant semiconductor detector by subjecting a silicon substrate to conventional barrier layer junction formation and then implanting Cu(I) or Cu(II) ions; and (ii) a radiation resistant semiconductor material which comprises a substrate and a barrier layer junction and which contains implanted Y ions for migration to radiation-induced hole defects to form hole-Y type defects.