Study of γ-ray radiation influence on SiO_2/HfO_2/AI_2O_3/HfO_2/AI_2O_3 memory capacitor by C-V and DLTS

摘要

Gamma-ray radiation effects on the SiO2/HfO2/Al2O3/HfO2/Al2O3 based charge trapping memory have been investigated. Capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements were applied to study the change in electrical properties from total dose radiation. C-V results showed a negative shift of flat-band voltage while dc memory window degraded after gamma-ray radiation. For DLTS result, two original peaks were found degraded while two new peaks appeared after radiation. Both C-V and DLTS results show that Gamma ray leads to the degradation of trapping effect.