Determination of the effective dominant electron and hole trap in neutron-irradiated silicon detectors

摘要

An attempt to determine the effective dominant electron and hole traps in standard, neutron-irradiated FZ silicon was made. The method was based on measurements of effective dopant concentration and effective carrier trapping times in the presence of an enhanced carrier concentration. Measurements can be well described with a deep donor level in the bottom part of the band gap and a deep acceptor level in the upper part of the band gap.