Ion beam neutralization using three-dimensional electron confinement by surface modification of magnetic poles

摘要

Advanced implantation systems used for semiconductor processing require transportation of quasi-parallel ion beams, which have low energy (~(11)B~+,~(31)P~+,~(75)As~+, E_(ion)=200-1000 eV). Divergence of the ion beam due to space charge effects can be compensated through injection of electrons into different regions of the ion beam. The present study shows that electron confinement takes place in regions of strong magnetic field such as collimator magnet provided with surface mirror magnetic fields and that divergence of the ion beam passing through such regions is largely reduced. Modeling results have been obtained using Opera3D/Tosca/Scala. Electrons may be provided by collision between ions and residual gas molecules or may be injected by field emitter arrays. The size of surface magnets is chosen such as not to disturb ion beam collimation, making the approach compatible with ion beam systems. Surface magnets may form thin magnetic layers with thickness h = 0.5 mm or less. Conditions for spacing of surface magnet arrays for optimal electron confinement are outlined.