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Energy consumption analysis for the read and write mode of the memristor with voltage threshold in the real-time control system

机译:实时控制系统中具有电压阈值的忆阻器读写模式的能耗分析

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In this paper, the hardware circuit of the memristor with voltage threshold control system (abbreviated as MVTCS) adapted to the real-time control system (abbreviated as RTCS) is designed based on the weight modification process of the memristor nerve morphology circuit. A novel forced erase mode, called no read, high voltage write (abbreviated as NR-HVW), is proposed to eliminate the need for a read process and to conduct the write process into the memristor. The authors combine the low voltage read and high voltage write (abbreviated as LVR-HVW) and the high voltage read and high voltage write (abbreviated as HVR-HVW) modes, and then compare and analyze the advantages and disadvantages of the three read and write modes from the perspective of energy consumption. The numerical simulation technology is used to verify the design proposed by the author, and the simulation results demonstrate that the LVR-HVW mode has the lowest energy consumption, the HVR-HVW mode comes the second, and the NR-HVW mode is the highest. However, the NR-HVW mode can meet high-precision requirements for the RTCS without testing equipment. The research of this, paper is believed to provide some technical support for the application of the memristor with voltage threshold (abbreviated as MVT) in the RTCS. (C) 2017 Elsevier B.V. All rights reserved.
机译:本文基于忆阻器神经形态电路的权重修改过程,设计了适用于实时控制系统(简称RTCS)的带电压阈值控制系统(简称MVTCS)的忆阻器硬件电路。提出了一种新颖的强制擦除模式,称为不读取,高压写入(缩写为NR-HVW),以消除对读取过程的需求并将写入过程导入忆阻器。作者将低电压读取和高电压写入(缩写为LVR-HVW)与高电压读取和高电压写入(缩写为HVR-HVW)模式进行了组合,然后比较和分析了三种读取和读取方式的优缺点。从能源消耗的角度写模式。通过数值仿真技术验证了作者提出的设计方案,仿真结果表明,LVR-HVW模式能耗最低,HVR-HVW模式次之,NR-HVW模式最高。 。但是,NR-HVW模式无需测试设备即可满足RTCS的高精度要求。相信本文的研究为RTCS中具有电压阈值的忆阻器(简称MVT)的应用提供了一些技术支持。 (C)2017 Elsevier B.V.保留所有权利。

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