Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

摘要

A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-anisot-ropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write current and control voltage are applied to Ta and CoFeB/MgO/CoFeB junctions, respectively. The critical current density required for switching the magnetization in CoFeB was modulated 3.6-fold by changing the control voltage from - 1.0 V to+l.OV. This modulation of the write current density is explained by the change in the surface anisotropy of the free layer from 1.7 mJ/m~2 to 1.6 mJ/m~2, which is caused by the electric field applied to the junction. The read disturb rate and write error rate, which are important performance parameters for memory applications, are drastically improved, and no error was detected in 5 × 10~8 cycles by controlling read and write sequences.