Voltage-Control Spintronics Memory (VoCSM) for a High-density and High-speed Non-volatile Memory

摘要

Technology to reduce energy consumption of computing devices, and especially that of working memories such as DRAM and SRAM, is critically important because of the recent drastic increase in electric power usage due to the information explosion. MRAM is the sole candidate for a non-volatile working memory because it offers the possibility of fast switching and long life time. Application of MRAM to the working memories is a focus of high expectations because of the potential advantages in terms of low-power computing.