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Direct Label-Free Electrical Immunodetection of Transplant Rejection Protein Biomarker in Physiological Buffer Using Floating Gate AlGaN/GaN High Electron Mobility Transistors

机译:使用浮栅AlGaN / GaN高电子迁移率晶体管在生理缓冲液中直接进行无排斥标记的免疫排斥检测生物排斥蛋白生物标记。

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Monokine induced by interferon gamma (MIG/CXCL9) is used as an immune biomarker for early monitoring of transplant or allograft rejection. This paper demonstrates a direct electrical, label-free detection method of recombinant human MIG with anti-MIG IgG molecules in physiologically relevant buffer environment. The sensor platform used is a biologically modified GaN-based high electron mobility transistor (HEMT) device. Biomolecular recognition capability was provided by using high affinity anti-MIG monoclonal antibody to form molecular affinity interface receptors on short N-hydroxysuccinimide-ester functionalized disulphide (DSP) self-assembled monolayers (SAMs) on the gold sensing gate of the HEMT device. A floating gate configuration has been adopted to eliminate the influences of external gate voltage. Preliminary test results with the proposed chemically treated GaN HEMT biosensor show that MIG can be detected for a wide range of concentration varying from 5 ng/mL to 500 ng/mL.
机译:干扰素γ(MIG / CXCL9)诱导的单因子被用作免疫生物标记物,用于早期监测移植或同种异体移植的排斥反应。本文展示了在生理相关缓冲环境中具有抗MIG IgG分子的重组人MIG的直接电学,无标记检测方法。所使用的传感器平台是生物改性的基于GaN的高电子迁移率晶体管(HEMT)器件。通过使用高亲和力的抗MIG单克隆抗体在HEMT装置的金感测门上的短N-羟基琥珀酰亚胺酯官能化的二硫化物(DSP)自组装单分子膜(SAM)上形成分子亲和力界面受体,提供了生物分子识别能力。采用浮栅配置以消除外部栅电压的影响。提议的经过化学处理的GaN HEMT生物传感器的初步测试结果表明,MIG可以检测到从5 ng / mL到500 ng / mL的宽范围浓度。

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