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首页> 外文期刊>Applied Physics Letters >Electrical detection of immobilized proteins with ungated AlGaN/GaN high-electron-mobility Transistors
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Electrical detection of immobilized proteins with ungated AlGaN/GaN high-electron-mobility Transistors

机译:非电离的AlGaN / GaN高电子迁移率晶体管对固定化蛋白质的电检测

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Ungated AlGaN/GaN high-electron-mobility transistor (HEMT) structures were functionalized in the gate region with aminopropyl silane. This serves as a binding layer to the AlGaN surface for attachment of fluorescent biological probes. Fluorescence microscopy shows that the chemical treatment creates sites for specific absorption of probes. Biotin was then added to the functionalized surface to bind with high affinity to streptavidin proteins. The HEMT drain-source current showed a clear decrease of 4 μA as this protein was introduced to the surface, showing the promise of this all-electronic detection approach for biological sensing.
机译:未栅极化的AlGaN / GaN高电子迁移率晶体管(HEMT)结构在氨基区域中被氨基丙基硅烷官能化。这用作AlGaN表面的结合层,用于附着荧光生物探针。荧光显微镜显示化学处理产生了探针特异性吸收的位点。然后将生物素添加到功能化表面上,以高亲和力与链霉亲和素蛋白结合。随着该蛋白被引入表面,HEMT漏源电流明显减少了4μA,这表明了这种用于生物传感的全电子检测方法的前景。

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