Effect of C- and Fe-doped GaN buffer on AlGaN/GaN high electron mobility transistor performance on GaN substrate using side-gate modulation

摘要

Side-gate (SG) modulation on AlGaN/GaN high electron mobility transistor performance with C-doped GaN buffer (C-GaN) and Fe-doped GaN buffer (Fe-GaN) layer on GaN substrate is experimentally investigated. The SG contacts are located 6 mu m from either side of the device mesa, and etched near the channel layer. SG modulation is done by two methods, that is, applying a fixed side-gate voltage (V-SG) bias while the DC characteristics are measured, and bidirectional dual sweeping the applied V-SG while measuring the on-state drain current (I-D). At fixed high negative V-SG,V- a drastic decrease in transconductance and I-D is evident for C-GaN as compared to Fe-GaN. Moreover, evidence of larger memory effect in C-GaN, is demonstrated as shown in the I-D hysteresis feature using bidirectional dual-sweep V-SG measurements. The I-D decreased at high negative V-SG is inferred to be due to the field modulation caused by the SG.