...
机译:变质HEMT技术的200 GHz单片集成功率放大器
Fraunhofer Inst. for Appl. Solid-State Phys. (IAF), Freiburg;
MMIC power amplifiers; high electron mobility transistors; millimetre wave power amplifiers; communication systems; frequency 186 GHz to 212 GHz; high-resolution imaging radar; metamorphic HEMT technology; metamorphic high electron mobility transistor technology; millimeter-wave monolithic integrated power amplifier; size 100 nm; G-band; mHEMT; millimeter-wave field effect transistor (FET) integrated circuits (ICs); millimeter-wave power amplification; monolithic microwave integrated circuits (MMICs);
机译:采用Cascode变体HEMT技术的200 GHz中功率放大器MMIC
机译:采用基于GaAs的0.1- / spl mu / m栅极GaAs HEMT MMIC生产工艺技术的94-GHz单片平衡功率放大器
机译:单片集成式120 GHz InGaAs / InAlAs / InP HEMT放大器
机译:Metalymphic HEMT技术中的200 GHz驱动放大器
机译:采用商用0.12微米硅锗HBT技术的30 GHz和90 GHz的Ka波段和W波段毫米波宽带线性功率放大器集成电路,输出功率超过100 mW
机译:利用晶体管单元非对称功率组合的Ku波段50 W GaN HEMT功率放大器
机译:采用变质HEmT技术的200 GHz单片集成功率放大器