Au–Sn flip-chip solder bump for microelectronic and optoelectronic applications

摘要

As an alternative to the time-consuming solder pre-forms and pastes currently used, a co-electroplating method of eutectic Au–Sn alloy was used in this study. Using a co-electroplating process, it was possible to plate the Au–Sn solder directly onto a wafer at or near the eutectic composition from a single solution. Two distinct phases, Au5Sn (ζ-phase) and AuSn (δ-phase), were deposited at a composition of 30 at.%Sn. The Au–Sn flip-chip joints were formed at 300 and 400°C without using any flux. In the case where the samples were reflowed at 300°C, only an (Au,Ni)3Sn2 IMC layer formed at the interface between the Au–Sn solder and Ni UBM. On the other hand, two IMC layers, (Au,Ni)3Sn2 and (Au,Ni)3Sn, were found at the interfaces of the samples reflowed at 400°C. As the reflow time increased, the thickness of the (Au,Ni)3Sn2 and (Au,Ni)3Sn IMC layers formed at the interface increased and the eutectic lamellae in the bulk solder coarsened.