Magnetic microscopy for 3D devices: Defect localization with high resolution and long working distance on complex system in package

摘要

As microelectronic technologies continue to develop according to the More than Moore's law, so that full systems can be confined inside one assembly, failure analysis must take this into account. Magnetic microscopy has achieved successful failure analysis of standard ICs but now it faces new challenges related to the lack of resolution triggered by the long working distances necessary when working on complex 3D architectures. Our new approach can push the present scope of the technique further by using a simulation approach, and by measuring not only the z component of the magnetic field but also the x and the y by tilting the sample. We will show how we can map and localize defects with an increased resolution taking into account three-dimensional geometries.