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机译:大功率GaN基发光二极管封装技术的失效模式和影响分析
Department of Electro-Optical Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC,Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC,Electro-Optical Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC;
Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan, ROC;
Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC;
Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC;
Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC;
Electronics and Opto-electronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan, ROC;
机译:质子辐照的GaN基大功率白色发光二极管的建模
机译:大功率白光发光二极管的磷光热隔离封装技术研究
机译:不同封装类型的GaN基垂直发光二极管的器件特性和热分析
机译:具有陶瓷封装的高功率发光二极管的热和力学分析
机译:GaN基发光二极管上的光学功能结构,用于提高光提取效率和控制发射模式。
机译:4英寸硅衬底上的高功率基于GaN的垂直发光二极管
机译:质子辐照GaN基大功率白光二极管建模