The analysis of the anomalous hot-carrier effect in partially depleted SOI pMOSFETs fabricated on modified wafer

摘要

The anomalous hot-carrier effect in partially depleted SOI pMOSFETs fabricated on modified wafer by silicon ion implantation is investigated and a theoretical analysis is proposed. The abnormal degradation and leakage current induced by hot carrier stress on the front gate are observed. The reason is that the silicon nanoclusters formed by silicon ion implantation can capture a large number of hot electrons during the stress. The effect of silicon ion implantation depth on this anomalous degradation is also investigated. Implantation closer to the interface of top silicon and buried oxide layer leads to more metastable traps and thus to varying degrees of degradation.