Photoluminescence study of type-Ⅱ GaAs quantum well wires grown on nano-faced (311)A surface: Quasi-1D exciton observation?

摘要

GaAs/AlAs corrugated superlattices (CSLs) grown on nano-faceted (311)A GaAs surface were studied using Raman spectroscopy and photoluminescence (PL) techniques. Raman data (splitting of localized transversal optical phonons) have proved structural anisotropy of the CSLs. The structural anisotropy leads to optical anisotropy appeared in strong polarization dependence of PL. Temperature dependence of PL has shown that the CSLs are type-Ⅱ superlattices. Additional peak in PL spectrum at low (77-100 K) temperatures can be result of quasi-1D exciton appearance in the CSLs.