Automatic statistical full quantum analysis of C-V and Ⅰ-Ⅴ characteristics for advanced MOS gate stacks

摘要

In this work, we present a global methodology for an automatic and reliable extraction of VFB (Flat Band Voltage), EOT( Equivalent Oxide thickness) and leakage current at referenced biases (constant bias offsets from VFB or Vt, the threshold voltage) on advanced gate stacks. Parameter extraction is proposed as a post processing step after automatic measurement. A new reliable extraction method for VFB is presented and the interest of the methodology is highlighted on several experimental results.