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Texture and strain in narrow copper damascene interconnect lines: An X-ray diffraction analysis

机译:窄铜镶嵌互连线中的纹理和应变:X射线衍射分析

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摘要

The behaviour of submicron damascene copper lines raises a number of fundamental issues such as grain growth in narrow trenches, thermomechanical properties of copper in these confined geometries, etc. This experimental study is aimed at evaluating the influence of annealing, polishing and line width on the room temperature strain and texture of narrow copper damascene lines. X-ray diffraction has been performed on arrays of lines with widths ranging between 3 μm and 0.09 μm. Two annealing conditions (150℃ and 400 ℃) have been used either prior or after Chemical Mechanical Polishing (CMP). A clear influence of the Cu overburden on the in-line microstructure is evidenced. X-ray diffraction analysis shows that strains in line longitudinal direction are higher in those annealed at 400 ℃ and decrease with the width of the lines. Effect of CMP on structure and relationship between both texture and strain and temperature of thermal treatments is discussed in light of these observations.
机译:亚微米大马士革铜线的行为提出了许多基本问题,例如狭窄沟槽中的晶粒生长,这些受限几何形状中铜的热机械性能等。本实验研究旨在评估退火,抛光和线宽对铜的影响。室温应变和窄铜镶嵌线的质地。 X射线衍射已在宽度介于3μm和0.09μm之间的线阵列上执行。在化学机械抛光(CMP)之前或之后使用了两种退火条件(150℃和400℃)。证明了铜覆盖层对在线显微组织的明显影响。 X射线衍射分析表明,400℃退火的线的应变较高,随线的宽度减小。根据这些观察结果,讨论了CMP对结构的影响以及织构,应变与热处理温度之间的关系。

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