High-frequency sensor technologies for inertial force detection based on thin-film bulk acoustic wave resonators (FBAR)

摘要

High-frequency technologies and fabrication processes intended for inertial force detection have been developed. The sensing devices are based on longitudinal-mode thin-film bulk acoustic wave resonators (FBAR) monolithically integrated with silicon (Si) technologies. Thus, compatibility with both technologies has been achieved in order to design and fabricate FBAR-based inertial force sensors. Characterization of the FBAR was carried out and the operating principle of the inertial force detectors studied. Additionally, characterization of a resonant accelerometer with embedded-FBAR was performed with the aim of concept's demonstration. So far, future developments of the technology and the application are discussed.