Shallow trench isolation based on selective formation of Oxidized porous silicon

摘要

We have studied the porous silicon (PS) formation dependence on the substrate doping concentration as a selective tool to form locally Oxidized regions in silicon wafers. This approach could be used for electrical isolation in CMOS circuits as a promising alternative to the shallow trench isolation ST1 process which begins to show some limitations (voiding and dishing) for the most advanced technologies.