FORMATION OF CRYSTALLINE SILICON NITRIDE THIN FILM IN SHALLOW TRENCH ISOLATION STRUCTURE AND SHALLOW TRENCH ISOLATION STRUCTURE FOR SUBMICRON INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide formation of a crystalline silicon nitride(Si₃N₄) thin film in a shallow trench isolation(STI) structure in an integrated circuit device. ;SOLUTION: An Si₃N₄ film with a thickness of 5-10nm is precipitated in an STI structure at temperatures of 720-780°C by low pressure chemical vapor precipitation (LPCVVD). Immediately after precipitation of the Si₃N₄ film, high-temperature high-speed heat annealing is carried out for 60 seconds at 1050-1100°C so as to invert the Si₃N₄ film from an amorphous state to a crystalline state. The resulting Si₃N₄ film has a lower electron trap density than the precipitated amorphous Si₃N₄. The control, range of the thickness is enlarged.;COPYRIGHT: (C)1997,JPO