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机译:130 nm部分耗尽的SOI CMOS技术中富硅浅沟槽隔离对总电离剂量硬化和栅极氧化物完整性的影响
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
Shallow trench isolation; Total ionizing dose; Radiation hardening; MOSFET; Gate oxide integrity;
机译:利用浅沟槽隔离寄生晶体管来表征部分耗尽的绝缘体上硅输入/输出n-MOSFET的总电离剂量效应
机译:在130nm部分耗尽的SOI I / O NMOSFET中,总电离剂诱导增强的热载体注射效果
机译:130 nm SiGe BiCMOS技术中基于三阱FET的宽带,高隔离度RF开关的总电离剂量响应
机译:32 nm部分和45 nm完全耗尽SOI器件的总电离剂量辐射响应
机译:部分耗尽的SOI CMOS中的辐射硬化模拟电路。
机译:在高达1级的28 nm Hi-K金属栅CMOS技术上的总电离剂量效应