机译:分子束外延生长的GaAs上原位原子层沉积Al 2 O 3的电学性质和界面化学环境
Department of Materials Science and Engineering, National Tsing Hua University. Hsinchu 30013, Taiwan;
Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University. Hsinchu 30013, Taiwan;
Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University. Hsinchu 30013, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University. Hsinchu 30013, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University. Hsinchu 30013, Taiwan;
Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan,Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan;
National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University. Hsinchu 30013, Taiwan;
atomic layer deposition; molecular beam epitaxy; iii-v compound semiconductor;
机译:伽马辐射对分子束外延生长的稀GaAs1-xNx层电学性质的影响
机译:硝酸氧化生长界面层的Si衬底上原子层沉积HfO2薄膜的电和物理化学性质
机译:分子束外延生长原位As掺杂Hg_1-xCd_xTe外延层的电学性质
机译:生长序列对由原子层分子束外延生长的INAS / GaAs量子点光学和结构性能的影响
机译:分子束外延生长掺杂杂质的ZnSe层的光致发光和电学性质
机译:分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质:热退火的影响
机译:分子束外延和原子层分子束外延生长的(113)GaAs / AlAs超晶格的光学性质
机译:通过分子束外延在Gaas衬底上的Inalas缓冲层上生长的InGaas / alGaas子带间跃迁结构