Fabrication and electrical characteristics of the Pt/SiNWs/n-Si/Al Schottky diode structure

摘要

Array-ordered silicon nanowires (SiNWs) were fabricated directly on n-Si substrate by wet chemical etching. The electroless plating method was used to modify SiNWs with platinum (Pt) nanoparticles as the top electrodes, forming the novel tridimensional Pt/SiNWs/n-Si/Al Schottky diode structure. The structural and electrical characteristics were investigated to obtain the optimal experimental conditions for forming the Pt/SiNWs/n-Si/Al Schottky barrier diode structures. Three key electrical parameters (ideality factors, barrier heights and series resistance) are 11.58 eV, 0.93 eV and 1.99 kΩ, respectively. The study reveals that the Pt/SiNWs/n-Si/Al Schottky diode structure would have a great potential application in nanoscale optoelectronic devices by controlling the experimental parameters properly.%Shanghai Precision Metrology and Testing Research Institute, 3888 Yuanjiang Road, Shanghai 201109, China,Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China;Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China;Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China;