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Utilizing the superior etch stop quality of HfO_2 in the front end of line wafer scale integration of silicon nanowire biosensors

机译:利用硅纳米线生物传感器的线晶片级集成的前端HFO_2的卓越蚀刻停止质量

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摘要

Silicon nanowire (SiNW) biosensors have received a special attention from the research community due to its ability to detect a range of species. The nano feature size of the SiNW has been exploited to fabricate small, low-cost, robust, portable, real-time read-out biosensors. These sensors are manufactured by two methods - top-down or bottom-up. Instead of the bottom-up method, the top-down approach is widely used due to its compatibility with complementary metal-oxide semiconductor (CMOS) process and scope of mass production. However, in the top-down method, the post fabrication microfluidic channel integration to access the SiNW test site remains complex and challenging. Since the nanosensor is expected to operate in a bio environment, it is essential to passivate the metal electrodes while pathways have to be made to access the test site. In this paper, we present a relatively easier method to access the SiNW test site without employing complex microfluidic channels while achieving leakage free passivation of metal electrodes and preserving the integrity of the nanosensor. This is accomplished in the last step of the manufacturing process by employing a lithography mask and reactive ion etching (RIE). HfO2 integrated crystalline silicon nanosensors are manufactured using novel top-down front end of line (FEOL) sidewall transfer lithography (STL) process. HfO2 acts as an etch stop layer while performing RIE in the last step to access the sensor test site. The 100 mm wafer scale results of 20 nm x 60 nm x 6 mu m (H x W x L) p-type nanosensors shows an average I-on/I-off = 10(5) with maximum turn-on voltage of - 4 V and uniform subthreshold slope of 70 mV/dec. In comparison with sensors encapsulated with SiO2, the HfO2 integrated nanosensors were found to improve the threshold voltage variation by 50%. Based on this work, the HfO2 integrated SiNW demonstrates good stability for biosensing application.
机译:由于其检测到一系列物种的能力,硅纳米线(Sinw)生物传感器因研究界而受到特别关注。 SINW的纳米特征大小已被利用以制造小型,低成本,鲁棒,便携式,实时读出的生物传感器。这些传感器由两种方法制造 - 自上而下或自下而上。由于其与互补金属 - 氧化物半导体(CMOS)工艺和批量生产范围的兼容性,基于自下而下的方法而不是自下而上的方法。然而,在自上而下的方法中,岗位制造的微流体通道集成到进入SINW测试现场仍然复杂和具有挑战性。由于纳米传感器预计在生物环境中运行,因此必须将金属电极钝化,同时必须使途径进入测试部位。在本文中,我们提出了一种相对容易的方法来进入SINW测试站点而不采用复杂的微流体通道,同时实现金属电极的泄漏自由钝化并保持纳米传感器的完整性。这是通过使用光刻掩模和反应离子蚀刻(RIE)的制造过程的最后一步完成。 HFO2集成晶体型硅纳米调传料是使用线(FEOL)侧壁转移光刻(STL)工艺的新型上下前端制造的。 HFO2充当蚀刻停止层,同时在最后一步中执行RIE以访问传感器测试站点。 20nm×60nm x 6 mu m(h x w x l)p型纳米调位器的100mm晶片刻度结果显示平均I-on / i-off> = 10(5),具有最大导通电压 - 4 V和均匀的亚阈值斜率为70 mV / Dec。与用SiO 2封装的传感器相比,发现HFO2集成纳米调传料将阈值电压变化提高50%。基于这项工作,HFO2综合SINW对生物传感应用稳定性良好。

著录项

  • 来源
    《Microelectronic Engineering》 |2019年第5期|13-20|共8页
  • 作者单位

    KTH Royal Inst Technol Dept Elect Sch Elect Engn & Comp Sci S-16440 Kista Sweden;

    KTH Royal Inst Technol Dept Elect Sch Elect Engn & Comp Sci S-16440 Kista Sweden;

    KTH Royal Inst Technol Dept Elect Sch Elect Engn & Comp Sci S-16440 Kista Sweden;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Silicon nanowire access; Biosensor; HfO2; FEOL; CMOS compatible; LOC;

    机译:硅纳米线进入;生物传感器;HFO2;FEOL;CMOS兼容;LOC;

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