A Microstructure For Measurement Of Thermal Conductivity Of Polysilicon Thin Films

摘要

The thermal conductivity of polysilicon films pro- duced in CMOS IC technology Is measured In the temperature range 80400 K. A differential method using a pair of oxide inicrobeam test structures with and without polysilicon film Is described. Electronic and lattice thermal conductivity are determined using electrical and galvanomagnetic data obtained for the same film. Above 200 K, we find 29 W/mK total ther mal conductivity with an electronic content of less than 3%.