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Studying chemically amplified resists and top antireflective coatings in photomask fabrication

机译:研究光掩模制造中化学放大的抗蚀剂和顶部抗反射涂层

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摘要

CARs have been used in chipmaking for several years. Photomask manufacturers are in the early stages of integrating these resists into their production processes. When choosing a potential CAR for DUV photomask lithography, mask makers have a strong financial incentive to choose materials that are already in wide use in the semiconductor industry and whose engineering and development costs have already been borne by wafer lithographers. Finally, choosing such a CAR ensures a stable supply at a reasonable cost. Using a TARC on a prototype photomask CAR is a reasonable and sound approach. Taken in a broader context, the data presented in this article reflecting the marginal results achieved using the TARC technique serve more to underscore fundamental differences in wafer and photomask lithography than a particular process development shortcoming.
机译:CAR已经在芯片制造中使用了几年。光掩模制造商处于将这些抗蚀剂集成到其生产过程中的早期阶段。在为DUV光掩模光刻选择潜在的CAR时,掩模制造商有很强的经济动机去选择已经在半导体行业中广泛使用并且其工程和开发成本已经由晶片光刻师承担的材料。最后,选择这种CAR可以确保以合理的价格稳定供应。在原型光罩CAR上使用TARC是一种合理而合理的方法。在更广阔的背景下,本文提供的数据反映了使用TARC技术获得的边际结果,比起特定的工艺开发缺陷,更能凸显晶圆和光掩模光刻技术的根本差异。

著录项

  • 来源
    《Micro》 |2003年第7期|p.65-69|共5页
  • 作者

    Charles Howard;

  • 作者单位

    DuPont Photomasks (Austin, TX);

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 环境科学、安全科学;
  • 关键词

  • 入库时间 2022-08-18 00:10:50

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