Effect of silicon window polarity on partial-SOI LDMOSFETs

摘要

The effect of silicon window polarity on partial-silicon-on-insulator (PSOI) lateral double-diffusedMOSFETs (LDMOSFETs) under high-voltage operation is studied. Different polarities of the silicon window in PSOI LDMOSFETs are analysed to investigate their effects on electrical characteristics: breakdown voltage (BV) and on-resistance (Ron). In PSOI LDMOSFETs, the P-type silicon window is considered as a part of the substrate, whereas the N-type silicon window falls into the drift region, which affects the high-voltage operation of devices. The two-dimensional simulation results show that the BV of PSOI LDMOSFET with P-type window is higher than that of PSOI LDMOSFET with N-type window, whereas the R_on of PSOI LDMOSFET with P-type window is lower than that of PSOI LDMOSFET with N-type window.