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High-voltage LDMOSFET devices having polysilicon trench-type guard rings
High-voltage LDMOSFET devices having polysilicon trench-type guard rings
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机译:具有多晶硅沟槽型保护环的高压LDMOSFET器件
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摘要
A high-voltage semiconductor device including a semiconductor layer formed on a substrate is provided. A first well region having a first conductivity type and a second well region having a second conductivity type are formed in the semiconductor layer. Source and drain regions are respectively formed in the first and second well regions. A gate structure is disposed on the semiconductor layer. A first isolation trench structure is disposed in the semiconductor layer and surrounds the first and second well regions. The first isolation trench structure includes a first polysilicon layer filling a first trench and having the second conductivity type, a first heavy doping region formed in an upper portion of the first polysilicon layer and having the second conductivity type, and a first insulating liner disposed on sidewalls of the first trench and surrounding the first polysilicon layer.
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